Topological Defect-Induced Magnetism in a Nanographene
نویسندگان
چکیده
منابع مشابه
Defect-induced magnetism in graphene
We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the defect-induced extended states has been observed. Calculated magnetic moments are equal to 1 B per hydrogen chemisorption defect and 1.12–1.53 B per vacancy d...
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ژورنال
عنوان ژورنال: Journal of the American Chemical Society
سال: 2020
ISSN: 0002-7863,1520-5126
DOI: 10.1021/jacs.9b09212